Farkon tushen hasken LED, yana amfani da haske{0}}mai fitar da ƙa'idar semiconductor P{1}N junction, an ƙirƙira shi a farkon 1960s. Kayan da aka yi amfani da shi a lokacin shine GaAsP, yana fitar da haske mai ja (λp{4}}nm). Tare da tuƙi na yanzu na 20 mA, hasken haske ya kasance 'yan dubbai na lumen, wanda ya haifar da ingantaccen inganci na kusan 0.1 lumen/watt.
A tsakiyar 1970s, ƙaddamar da abubuwan In da N sun ba wa LEDs damar samar da kore (λp=555nm), rawaya (λp=590nm), da orange (λp=610nm) haske, kuma an inganta ingantaccen ingancin zuwa 1 lumen/watt.
A farkon 1980s, GaAlAs LED hasken haske ya fito, yana ba da damar jajayen LEDs don cimma ingantaccen inganci na 10 lumens/watt.
A farkon shekarun 1990s, nasarar haɓaka sabbin kayayyaki guda biyu{1}}GaAlInP (mai fitar da haske mai ja da rawaya) da GaInN (hasken kore da shuɗi){2} ya inganta ingantaccen hasken LEDs. A cikin 2000, tsohon ya samar da LEDs tare da ingantaccen haske na 100 lumens a kowace watt a cikin ja da ja da orange yankuna (λp=615nm), yayin da na karshen ya samar da LEDs tare da ingantaccen inganci na 50 lumens a kowace watt a cikin yankin kore (λp=530nm).
